High voltage devices in advanced CMOS technologies

被引：24

作者：

Bianchi, R. A. ^{[1
]}

Raynaud, C. ^{[1
]}

Blanchet, F. ^{[1
]}

Monsieur, F. ^{[1
]}

Noblanc, O. ^{[1
]}

机构：

[1] STMicroelectronics, F-38926 Crolles, France

来源：

PROCEEDINGS OF THE IEEE 2009 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2009年

关键词：

D O I：

10.1109/CICC.2009.5280839

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CMOS technologies for mobile systems require integrated high voltage devices to address analog baseband and RF power applications. Technology and device architecture evolution, from 0.5 mu m BCD-like to advanced 45nm CMOS, on bulk and thin SOI substrates, are reviewed in this paper. Main challenges encountered when integrating these devices in advanced CMOS are explained. The influence of the gate oxide thickness on the relevant figures of merit and some considerations on performance-reliability trade-off are provided.

引用

页码：363 / 369

页数：7

共 11 条

[1] Apostolidou M, 2008, IEEE RAD FREQ INTEGR, P123
[2] Bianchi RA, 2008, INT EL DEVICES MEET, P137
[3] Bon O, 2007, IEEE INT SOI CONF, P53
[4] A silicon RFCMoS SOI technology for integrated cellular/WLAN RF TX modules
Costa, J.
Carroll, M.
Jorgenson, J.
Mckay, T.
Ivanov, T.
Dinh, T.
Kozuch, D.
Remoundos, G.
Kerr, D.
Tornbak, A.
Mcmaken, J.
Zybura, M.
[J]. 2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6, 2007, : 445 - 448
[5] Grelu C, 2005, INT SYM POW SEMICOND, P339
[6] Mullen W, 2007, ARION, V15, P25
[7] Silicon technology status and perspectives for multi-band and multi-standard challenges in upcoming RF frontends
Nobbe, Dan W.
[J]. 2008 IEEE RADIO AND WIRELESS SYMPOSIUM, VOLS 1 AND 2, 2008, : 191 - 194
[8] Pan R, 2006, INT SYM POW SEMICOND, P349
[9] RAYNAUD C, 2009, IEEE RAD FREQ UNPUB
[10] Tinella C, 2006, 2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, P58

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