A physical evaporation synthetic route to large-scale GaN nanowires and their dielectric properties

被引：55

作者：

Zhou, SM ^{[1
]}

Feng, YS

Zhang, LD

机构：

[1] Acad Sinica, Inst Solid State Phys, Hefei 230031, Peoples R China

[2] Lingling Univ, Yongzhou 425000, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2003年 / 369卷 / 5-6期

关键词：

D O I：

10.1016/S0009-2614(03)00042-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Large-scale GaN nanowires (GNWs) were prepared by thermal evaporation of conventional GaN powders (CGPs) under controlled conditions without involvement of any template or patterned catalyst. The as-synthesized GNWs are about 30 nm in diameter and several hundreds of microns in length. The growth of GNWs is controlled by the conventional vapor-solid mechanism. Dielectric properties of GNWs and CGPs are measured in the frequency range of 10(2)-10(7) Hz. The data obtained indicate that the grain size of samples has great influence on the dielectric properties, where the corresponding mechanism is discussed. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：610 / 614

页数：5

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