Optimization of CdSe quantum dot concentration in P3HT:PCBM layer for the improved performance of hybrid solar cells

被引：9

作者：

Park, Eung-Kyu ^{[1
]}

Kim, Jae-Hyoung ^{[1
]}

Ji, In Ae ^{[2
]}

Choi, Hye Mi ^{[2
]}

Kim, Ji-Hwan ^{[1
]}

Lim, Ki-Tae ^{[1
]}

Bang, Jin Ho ^{[2
]}

Kim, Yong-Sang ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 440746, Gyeonggi, South Korea

[2] Hanyang Univ, Dept Chem & Appl Chem, Ansan 426791, Gyeonggi, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2014年 / 119卷

关键词：

Hybrid solar cell; P3HT:PCBM; CdSe quantum dot; Recombination mechanism; PLASMON RESONANCE; DEPENDENCE;

D O I：

10.1016/j.mee.2014.05.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The improved performance of hybrid solar cells was obtained due to the effects of CdSe quantum dots (QDs) blended in the active layer. Different concentrations of CdSe QDs were mixed in the poly(3-hexylthiophene):[6,6]-phenyl C-61 butyric acid methyl ester (P3HT:PCBM) based active layer. We investigated the effects of CdSe QDs on the solar cell performances by ranging its concentration from 2 to 24 mg/mL. The charge transport in the active layer was improved at the optimized CdSe QDs concentration of 6 mg/mL. The solar cell with pristine active layers showed a 2.98% power conversion efficiency while that with 6 mg/mL CdSe QDs blended in layer showed a higher power conversion efficiency of 3.35% under AM 1.5G illumination. Analysis of recombination mechanism using the current density-voltage (J-V) characteristic at various light intensities was also performed. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：169 / 173

页数：5

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