A facile low-cost preparation of high-k ZrO2 dielectric films for superior thin-film transistors

Herein, we report a facile low-cost approach to high-k ZrO2 dielectric films and integrated devices by using lightwave (LW) irradiation induced chloride-based low-temperature solution route. The as-prepared devices have exhibited comparable performances to the traditional thermally-annealed devices, which are prepared at high temperatures. The as-prepared high-k ZrO2 films exhibit the smooth surface, amorphous phase and large band gap. LW-irradiated ZrO2 films, processed at similar to 230 degrees C for 40 min, rendered excellent performance, including a great capacitance of 270 nF/cm(2) and a low leakage current of 10-8 A/cm(2), superior to those of ZrO2 films obtained through thermal annealing (430 degrees C for 60 min). The present LW irradiation effectively promoted M-O framework and, simultaneously, facilitated the elimination of oxygen defects from the precursor film. Furthermore, the LW irradiation of metal chlorides can be extended to fabricate other oxides. For instance, we have used LW irradiation to prepare In2O3 and InZnO semiconductor films from chloride precursors. Moreover, LW irradiated In2O3-based TFTs, with ZrO2 dielectric films, exhibited a large mobility of 19.4 cm(2)/V as well as a desirable on/off ratio of 10(6). In addition, LW irradiated In2O3-based TFTs exhibited negligible hysteresis and high bias stability, which are highly desirable in practical applications. The results reveal that LW irradiation of chlorides holds promise for the facile low-cost production of high-performance dielectric films for diverse applications.