Tunable Graphene-GaSe Dual Heterojunction Device

被引：96

作者：

Kim, Wonjae ^{[1
]}

Li, Changfeng ^{[1
]}

Chaves, Ferney A. ^{[2
]}

Jimenez, David ^{[2
]}

Rodriguez, Raul D. ^{[3
]}

Susoma, Jannatul ^{[1
]}

Fenner, Matthias A. ^{[4
]}

Lipsanen, Harri ^{[1
]}

Riikonen, Juha ^{[1
]}

机构：

[1] Aalto Univ, Dept Micro & Nanosci, Tietotie 3, Espoo 02150, Finland

[2] Univ Autonoma Barcelona, Escola Engn, Dept Elect Engn, Campus UAB, E-08193 Bellaterra, Spain

[3] Tech Univ Chemnitz, Inst Phys, Reichenhainer Str 70, D-09126 Chemnitz, Germany

[4] Keysight Technol, Lyoner Str 20, D-60528 Frankfurt, Germany

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 09期

基金：

芬兰科学院;

关键词：

TRANSISTORS; TRANSPORT; BANDGAP; INSE;

D O I：

10.1002/adma.201504514

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1845 / 1852

页数：8

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