Power gain analysis of SiGeHBBTs under large-signal power matching conditions

被引：0
作者：
Hang, Ningyue [1 ]
Mai, Zhenqiang [1 ]
Jiang, Hao [2 ]
机构：
[1] Univ Wisconsin, Dept Elect & Comp Engn, 1415 Engn Dr, Madison, WI 53706 USA
[2] Broadcom, Inc San Diego, San Diego, CA USA
来源：
2007 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2007年
关键词：
common-emitter; common-base; power amplifiers; power gain; SiGe; HBTs;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Power gain of SiGe HBTs under large-signal power matching conditions is analytically studied. It is found that, the transducer power gain for CE (common-emitter) and CB (common-base) configurations is the same at high frequencies for the same load impedance. At low frequencies, the CE configuration has much higher transducer power gain than the CB configuration. The theoretical analysis is verified with simulations using commercial device models. In addition, the influence of the load impedance on the maximum transducer power gain of CE and CB SiGe HBTs is investigated.
引用
收藏
页码：68 / +
页数：2
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