A simple model for large-scale simulations of fcc metals with explicit treatment of electrons

被引:2
作者
Mason, D. R. [1 ]
Foulkes, W. M. C. [1 ]
Sutton, A. P. [1 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2AZ, England
基金
英国工程与自然科学研究理事会;
关键词
tight-binding; transition metal; computer simulation; electronic structure; point defects; TIGHT-BINDING;
D O I
10.1080/09500830903430979
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The continuing advance in computational power is beginning to make accurate electronic structure calculations routine. Yet, where physics emerges through the dynamics of tens of thousands of atoms in metals, simplifications must be made to the electronic Hamiltonian. We present the simplest extension to a single s-band model [A. P. Sutton, T.N. Todorov, M.J. Cawkwell and J. Hoekstra, Phil. Mag. A 81 (2001) p. 1833.] of metallic bonding, namely, the addition of a second s-band. We show that this addition yields a reasonable description of the density of states at the Fermi level, the cohesive energy, formation energies of point defects and elastic constants of some face-centred cubic (fcc) metals.
引用
收藏
页码:51 / 60
页数:10
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