Junction thermal impedance measurement of superluminescent diodes

被引：3

作者：

Zhou, Sheng ^{[1
]}

Zhang, Xiupu ^{[1
]}

机构：

[1] Concordia Univ, Dept Elect & Comp Engn, Montreal, PQ H3G 1M8, Canada

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2007年 / 19卷 / 9-12期

关键词：

mean wavelength; measurement; superluminescent diodes (SLDs); thermal impedance;

D O I：

10.1109/LPT.2007.895051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method is presented for junction thermal impedance measurement of superluminescent diodes. A few derivatives of mean wavelength, optical power, and voltage over temperature and current are used for the calculation. Carrier effect is removed. High accuracy is obtained by data regression on variables separately. Both analytical formula and experimental results are provided.

引用

页码：683 / 685

页数：3

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