Development of photovoltaic solar cells based on heterostructure of layered materials: challenges and opportunities

被引:7
|
作者
Das, Priyanka [1 ]
Behura, Sanjay K. [2 ]
McGill, Stephen A. [3 ]
Raghavan, Dharmaraj [4 ]
Karim, Alamgir [5 ]
Pradhan, Nihar R. [1 ]
机构
[1] Jackson State Univ, Dept Chem Phys & Atmospher Sci, 1400 John R Lynch St, Jackson, MS 39217 USA
[2] Univ Arkansas, Dept Chem & Phys, Pine Bluff, AR USA
[3] Natl High Magnet Field Lab, Tallahassee, FL 32310 USA
[4] Howard Univ, Dept Chem, Washington, DC 20059 USA
[5] Univ Houston, Dept Chem & Biomol Engn, Houston, TX USA
基金
美国国家科学基金会;
关键词
P-N-JUNCTIONS; LOW-COST; PHOTOCURRENT GENERATION; MOLYBDENUM-DISULFIDE; BLACK PHOSPHORUS; EPITAXIAL-GROWTH; MONOLAYER; MOS2; GRAPHENE; EFFICIENCY;
D O I
10.1007/s42247-021-00205-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional (2D) van derWaals layered materials created new avenue for the last decade in the field of optoelectronics for showing promising new and diverse applications. Strong light-matter interaction properties on these materials in single to few atomic layer form realized promising thinnest possible photovoltaic solar cells. Over the past few years, optoelectronics properties such as field-effect transistors, photodiodes, memory devices, optical switching, and excitonic physics of these materials have been intensively explored which indicates great potential for photovoltaic applications. Here, we reviewed the recent progress on photovoltaic solar cells of these 2D materials and their heterostructures with different device configurations. The p-n junction solar cells of vertical and lateral configuration devices are discussed in detail based on their stacking using mechanical transfer method or fabricated using CVD technique. The performance of each device configurations was also discussed based on their charge collection efficiency. In addition, we discussed the challenges and limitation of these photovoltaic solar cells and the possible routes to enhance the efficiency for future practical applications.
引用
收藏
页码:881 / 900
页数:20
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