Stress-mediated magnetoelectric control of ferromagnetic domain wall position in multiferroic heterostructures

被引：27

作者：

Mathurin, Theo ^{[1
]}

Giordano, Stefano ^{[1
]}

Dusch, Yannick ^{[1
]}

Tiercelin, Nicolas ^{[1
]}

Pernod, Philippe ^{[1
]}

Preobrazhensky, Vladimir ^{[1
,2
]}

机构：

[1] ComUE Lille Nord France, ECLille, Joint Int Lab LICS LEMAC IEMN, UMR CNRS 8520, Ave Poincare,BP 60069, F-59652 Villeneuve Dascq, France

[2] Russian Acad Sci, Wave Res Ctr, Prokhorov Gen Phys Inst, 38 Vavilov Str, Moscow 119991, Russia

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 08期

关键词：

DRIVEN; PROPAGATION; DYNAMICS;

D O I：

10.1063/1.4942388

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The motion of a ferromagnetic domain wall in nanodevices is usually induced by means of external magnetic fields or polarized currents. Here, we demonstrate the possibility to reversibly control the position of a Neel domain wall in a ferromagnetic nanostripe through a uniform mechanical stress. The latter is generated by an electro-active substrate combined with the nanostripe in a multiferroic heterostructure. We develop a model describing the magnetization distribution in the ferromagnetic material, properly taking into account the magnetoelectric coupling. Through its numerical implementation, we obtain the relationship between the electric field applied to the piezoelectric substrate and the position of the magnetic domain wall in the nanostripe. As an example, we analyze a structure composed of a PMN-PT substrate and a TbCo2/FeCo composite nanostripe. (C) 2016 AIP Publishing LLC.

引用

页数：5

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