Ultralow work function of scandium metal gate with tantalum nitride interface layer for n-channel metal oxide semiconductor application

被引:20
作者
Hasan, Musarrat [1 ]
Park, Hokyung
Yang, Hyundoek
Hwang, Hyunsang
Jung, Hyung-Suk
Lee, Jong-Ho
机构
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Gwanju 500712, South Korea
[2] Samsung Elect Co Ltd, Syst LSI Div, Adv Proc Dev Team, Gyeonggi Do 449711, South Korea
关键词
D O I
10.1063/1.2711398
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors have investigated n-channel metal oxide semiconductor compatible metal gate with ultralow work function using tantalum nitride (TaNx)/scandium(Sc) stack layer. By adjusting the deposition condition, the effective work function as low as 4.0 eV with improved thermal stability can be obtained. Without TaNx layer, work function of pure Sc gate on HfO2 was about 4.2 eV and show thermal instability at high temperature which can be explained by reaction between Sc and HfO2. The authors found that control of TaNx layer is the critical process to maintain thermal stability and work function. The TaNx/Sc stack process shows promise for future high-k metal gate applications. (c) 2007 American Institute of Physics.
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页数:3
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