Selective area growth of Bernal bilayer epitaxial graphene on 4H-SiC (0001) substrate by electron-beam irradiation

被引：13

作者：

Dharmaraj, P. ^{[1
]}

Jeganathan, K. ^{[1
]}

Parthiban, S. ^{[2
,3
]}

Kwon, J. Y. ^{[2
,3
]}

Gautam, S. ^{[4
]}

Chae, K. H. ^{[4
]}

Asokan, K. ^{[5
]}

机构：

[1] Bharathidasan Univ, Sch Phys, Ctr Nanosci & Nanotechnol, Tiruchirappalli 620024, Tamil Nadu, India

[2] Yonsei Univ, Sch Integrated Technol, Inchon 406840, South Korea

[3] Yonsei Univ, Yonsei Inst Convergence Technol, Inchon 406840, South Korea

[4] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 136791, South Korea

[5] Inter Univ Accelerator Ctr, New Delhi 110067, India

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 18期

关键词：

HIGH-QUALITY;

D O I：

10.1063/1.4901074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report selective area growth of large area homogeneous Bernal stacked bilayer epitaxial graphene (BLEG) on 4H-SiC (0001) substrate by electron-beam irradiation. Sublimation of Si occurs by energetic electron irradiations on SiC surface via breaking of Si-C bonds in the localized region, which allows the selective growth of graphene. Raman measurements ensure the formation of homogeneous BLEG with weak compressive strain of -0.08%. The carrier mobility of large area BLEG is similar to 5100 cm(2) V-1 s(-1) with a sheet carrier density of 2.2 x 10(13) cm(-2). Current-voltage measurements reveal that BLEG on 4H-SiC forms a Schottky junction with an operation at mA level. Our study reveals that the barrier height at the Schottky junction is low (similar to 0.58 eV) due to the Fermi-level pinning above the Dirac point. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 28 条

[1] Polarization dependence of x-ray absorption spectra in graphene [J].

Chowdhury, M. T. ;

Saito, R. ;

Dresselhaus, M. S. .

PHYSICAL REVIEW B, 2012, 85 (11)

[2] Controlled and Selective Area Growth of Monolayer Graphene on 4H-SiC Substrate by Electron-Beam-Assisted Rapid Heating [J].

Dharmaraj, P. ;

Jeganathan, K. ;

Gokulakrishnan, V. ;

Venkatesh, P. Sundara ;

Parameshwari, R. ;

Ramakrishnan, V. ;

Balakumar, S. ;

Asokan, K. ;

Ramamurthi, K. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (37) :19195-19202

[3]

Emtsev KV, 2009, NAT MATER, V8, P203, DOI [10.1038/nmat2382, 10.1038/NMAT2382]

[4] Raman spectroscopy as a versatile tool for studying the properties of graphene [J].

Ferrari, Andrea C. ;

Basko, Denis M. .

NATURE NANOTECHNOLOGY, 2013, 8 (04) :235-246

[5] Growth and electronic transport properties of epitaxial graphene on SiC [J].

Hibino, H. ;

Tanabe, S. ;

Mizuno, S. ;

Kageshima, H. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (15)

[6]

Ji SH, 2012, NAT MATER, V11, P114, DOI [10.1038/NMAT3170, 10.1038/nmat3170]

[7] A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel [J].

Krach, F. ;

Hertel, S. ;

Waldmann, D. ;

Jobst, J. ;

Krieger, M. ;

Reshanov, S. ;

Schoner, A. ;

Weber, H. B. .

APPLIED PHYSICS LETTERS, 2012, 100 (12)

[8] Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils [J].

Li, Xuesong ;

Cai, Weiwei ;

An, Jinho ;

Kim, Seyoung ;

Nah, Junghyo ;

Yang, Dongxing ;

Piner, Richard ;

Velamakanni, Aruna ;

Jung, Inhwa ;

Tutuc, Emanuel ;

Banerjee, Sanjay K. ;

Colombo, Luigi ;

Ruoff, Rodney S. .

SCIENCE, 2009, 324 (5932) :1312-1314

[9] Raman spectroscopy of epitaxial graphene on a SiC substrate [J].

Ni, Z. H. ;

Chen, W. ;

Fan, X. F. ;

Kuo, J. L. ;

Yu, T. ;

Wee, A. T. S. ;

Shen, Z. X. .

PHYSICAL REVIEW B, 2008, 77 (11)

[10] Electric field effect in atomically thin carbon films [J].

Novoselov, KS ;

Geim, AK ;

Morozov, SV ;

Jiang, D ;

Zhang, Y ;

Dubonos, SV ;

Grigorieva, IV ;

Firsov, AA .

SCIENCE, 2004, 306 (5696) :666-669

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