10-GHz train of sub-500-fs optical soliton-like pulses from a surface-emitting semiconductor laser

被引：52

作者：

Hoogland, S ^{[1
]}

Garnache, A

Sagnes, I

Roberts, JS

Tropper, AC

机构：

[1] Univ Southampton, Dept Phys & Astron, Southampton SO17 1BJ, Hants, England

[2] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

[3] Univ Montpellier, CNRS, UMR5507, CEM 2, F-34095 Montpellier, France

[4] CNRS, Lab Photoique & Nanostruct, F-91460 Marcoussis, France

[5] Univ Sheffield, DEEE, EPSRC Cent Facil 25 Semiconductors, Sheffield S1 3JD, S Yorkshire, England

[6] Univ Southampton, Sch Phys & Astron, Southampton SO17 1BJ, Hants, England

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

diode-pumped laser; mode locking; semiconductor laser; ultrashort pulses;

D O I：

10.1109/LPT.2004.839464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report sub-500-fs operation of a passively-mode-locked diode-pumped external-cavity surface-emitting semiconductor laser at a repetition rate of 10.014 GHz. For an incident pump power of 706 mW, the laser produced 486-fs soliton-like pulses, with an average output power of 30.3 mW. The role of the ac Stark effect in shaping subpicosecond pulses is demonstrated.

引用

收藏

页码：267 / 269

页数：3

相关论文

共 10 条

[1] Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power [J].

Garnache, A ;

Hoogland, S ;

Tropper, AC ;

Sagnes, I ;

Saint-Girons, G ;

Roberts, JS .

APPLIED PHYSICS LETTERS, 2002, 80 (21) :3892-3894

[2] High-power passively mode-locked semiconductor lasers [J].

Häring, R ;

Paschotta, R ;

Aschwanden, A ;

Gini, E ;

Morier-Genoud, F ;

Keller, U .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (09) :1268-1275

[3] Q-switching stability limits of continuous-wave passive mode locking [J].

Hönninger, C ;

Paschotta, R ;

Morier-Genoud, F ;

Moser, M ;

Keller, U .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1999, 16 (01) :46-56

[4] Passively mode-locked diode-pumped surface-emitting semiconductor laser [J].

Hoogland, S ;

Dhanjal, S ;

Tropper, AC ;

Roberts, JS ;

Häring, R ;

Paschotta, R ;

Morier-Genoud, F ;

Keller, U .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (09) :1135-1137

[5] Picosecond pulse generation with 1.5 μm passively modelocked surface-emitting semiconductor laser [J].

Hoogland, S ;

Garnache, A ;

Sagnes, I ;

Paldus, B ;

Weingarten, KJ ;

Grange, R ;

Haiml, M ;

Paschotta, R ;

Keller, U ;

Tropper, AC .

ELECTRONICS LETTERS, 2003, 39 (11) :846-847

[6] Picosecond pulse generation from passively modelocked vertical cavity diode laser at up to 15 GHz pulse repetition rate [J].

Jasim, K ;

Zhang, Q ;

Nurmikko, AV ;

Ippen, E ;

Mooradian, A ;

Carey, G ;

Ha, W .

ELECTRONICS LETTERS, 2004, 40 (01) :34-36

[7] OPTICAL NONLINEARITIES IN STRAINED-LAYER INGAAS/GAAS MULTIPLE QUANTUM-WELLS [J].

JIN, R ;

OKADA, K ;

KHITROVA, G ;

GIBBS, HM ;

PEREIRA, M ;

KOCH, SW ;

PEYGHAMBARIAN, N .

APPLIED PHYSICS LETTERS, 1992, 61 (15) :1745-1747

[8] Cancellation of B-integral accumulation for CPA lasers [J].

Konoplev, OA ;

Meyerhofer, DD .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (02) :459-469

[9] Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers [J].

Paschotta, R ;

Häring, R ;

Garnache, A ;

Hoogland, S ;

Tropper, AC ;

Keller, U .

APPLIED PHYSICS B-LASERS AND OPTICS, 2002, 75 (4-5) :445-451

[10] Mode-locking ultrafast solid-state lasers with saturable Bragg reflectors [J].

Tsuda, S ;

Knox, WH ;

Cundiff, ST ;

Jan, WY ;

Cunningham, JE .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (03) :454-464