Room-temperature synthesis of ultraviolet-emitting nanocrystalline GaN films using photochemical vapor deposition

被引：8

作者：

Yamazaki, S

Yatsui, T

Ohtsu, M

Kim, TW

Fujioka, H

机构：

[1] Japan Sci & Technol Agcy, SORST, Tokyo 1940004, Japan

[2] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Kanagawa 2268502, Japan

[3] Univ Tokyo, Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan

[4] Kanagawa Acad Sci & Technol, Takatsu Ku, Kanagawa 2130012, Japan

[5] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 15期

关键词：

D O I：

10.1063/1.1806271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated UV-emitting nanocrystalline gallium nitride (GaN) films at room temperature using photochemical vapor deposition (PCVD). For the samples synthesized at room temperature with V/III ratios exceeding 5.0x10(4), strong photoluminescence peaks at 3.365 and 3.310 eV, which can be ascribed to transitions in a mixed phase of cubic and hexagonal GaN, were observed at 5 K. A UV-emission spectrum with a full width at half-maximum of 100 meV was observed, even at room temperature. In addition, x-ray photoelectron spectroscopy measurement revealed that the film deposited by PCVD at room temperature was well nitridized. (C) 2004 American Institute of Physics.

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页码：3059 / 3061

页数：3

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