Near-infrared heterojunction field modulated phototransistors with distinct photodetection/photostorage switching features for artificial visuals

被引:10
作者
Han, Jiayue [1 ]
Du, Xiaoyang [1 ]
Zhang, Zhenhan [2 ,3 ]
He, Zeyu [1 ]
Han, Chao [1 ]
Xie, Runzhang [3 ]
Wang, Fang [3 ]
Tao, Silu [1 ]
Hu, Weida [3 ]
Shan, Chongxin [4 ]
Yang, Ming [1 ]
Gou, Jun [1 ,5 ]
Wu, Zhiming [1 ,5 ]
Jiang, Yadong [1 ,5 ]
Wang, Jun [1 ,5 ]
机构
[1] Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, Chengdu 610054, Peoples R China
[2] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China
[4] Zhengzhou Univ, Sch Phys & Engn, Henan Key Lab Diamond Optoelect Mat & Devices, Zhengzhou 450001, Peoples R China
[5] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
GRAPHENE;
D O I
10.1039/d2tc01363k
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
With the rising demand for recording, computing and image capture, advanced optoelectronic detection, storage and logic devices are highly pursued. Nevertheless, a multi-functional vision chip based on infrared detection and memory switching has never been demonstrated. Here, by utilizing the electronic extraction layer ZnO and a face-on orientation of the bulk heterojunction (BHJ), we exhibit broadband visible to near-infrared photo-response and photo-storage characters on a graphene phototransistor. Functions as photodetection and photo-storage can be switched with the variation of the gate voltage. The device demonstrates high photo-responsivity up to 1.88 x 10(6) A W-1 at 895 nm, corresponding to a detectivity of 4.8 x 10(12) Jones. Importantly, the rewritable and switching infrared optoelectronic memory function can be achieved with good retention over 10(4) s. Both retinomorphic vision and memorial preprocessing in artificial visuals are simultaneously realized by the photodetection/photostorage switching property. Such nearly all-solution processes in our phototransistors may open up the path for the large-scale and easy manufacturing of infrared multifunctional bio-optoelectronic devices.
引用
收藏
页码:9198 / 9207
页数:10
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