Holographic recording in amorphous chalcogenide thin films

被引：4
|
作者：
Teteris, J. [1 ]
Reinfelde, Mara [1 ]
机构：
[1] Latvian State Univ, Inst Solid State Phys, LV-1063 Riga, Latvia
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2007年 / 353卷 / 13-15期
关键词：
amorphous semiconductors; photoinduced effects; chalcogenides;
D O I：
10.1016/j.jnoncrysol.2006.09.069
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Holographic recording by He-Ne laser (line 632.8 nm) light in amorphous As0.55Se0.45 thin films for different film thickness and grating period was studied. A strong dependence of the diffraction efficiency of the gratings on the readout light wavelength (650 nm, 805 nm and 1150 nm) was observed. A decrease in diffraction efficiency for longer wavelengths is explained by a decrease in the photoinduced changes of refractive index. It is shown that high efficiency gratings can be recorded in As0.55Se0.45 films with a thickness of similar to 1 gm. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1450 / 1453
页数：4
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