A Hybrid Two Stage 20-W GaN HEMT Ku-Band Power Amplifier for Very Small Aperture Terminals

被引：0

作者：

Rautschke, Felix ^{[1
]}

Maassen, Daniel ^{[1
]}

Vehring, Soenke ^{[1
]}

Boeck, Georg ^{[1
]}

机构：

[1] Berlin Inst Technol, Microwave Engn Lab, Berlin, Germany

来源：

2018 22ND INTERNATIONAL MICROWAVE AND RADAR CONFERENCE (MIKON 2018) | 2018年

关键词：

Digital video broadcasting; gallium nitride; HEMTs; microwave circuits; power amplifiers; satellite ground stations;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This contribution is about a two stage power amplifier (PA) in hybrid microwave integrated circuit (MIC) technology covering the extended Ku-band uplink (13.75 - 14.5 GHz) for satellite communication. A high relative permittivity alumina substrate and a 250 nm GaN bare-die technology have been chosen to realize the matching circuits of the amplifier. A systematic design approach using simulation-based multi-frequency source- and load-pull analyses in order to find optimum load and source impedances for maximum output power was applied for the proposed PA. The measured output power is about 14W for a continuous wave (CW) signal with a PAE of more than 22% in the frequency range of interest. Additionally, modulated measurements including a modern pre-distortion technique state an average output power of 12W and a peak power of about 22W achieving a PAE of 20% using a 8PSK signal.

引用

页码：104 / 107

页数：4

共 3 条

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