Transport Properties of Two-Dimensional Topological Insulators and Excitonic Condensates

被引：0
作者：
Boev, M., V [1 ,2 ]
Braginskii, L. S. [1 ,3 ]
Kovalev, V. M. [1 ,2 ]
Magarill, L., I [1 ,3 ]
Mahmoodian, M. M. [1 ,3 ]
Entin, M., V [1 ,3 ]
机构：
[1] Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
[2] Novosibirsk State Tech Univ, Novosibirsk 630073, Russia
[3] Novosibirsk State Univ, Novosibirsk 630090, Russia
来源：
OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING | 2020年 / 56卷 / 05期
基金：
俄罗斯基础研究基金会; 俄罗斯科学基金会;
关键词：
two-dimensional topological insulator; boundary conditions; low-temperature conductivity; exciton; Bose– Einstein condensate;
D O I：
10.3103/S8756699020050027
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The paper reviews studies of the Laboratory of Theoretical Physics of the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences. Two research directions are discussed: transport properties of two-dimensional excitonic systems and electron transport in two-dimensional topological insulators. Particular attention is given to excitonic systems in the mode of Bose-Einstein condensate and to the theory of conductivity of two-dimensional topogical insulator with a thickness close to the critical one caused by developed network of edge states permeating the sample.
引用
收藏
页码：545 / 552
页数：8
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