High efficiency silicon MIS/AL solar cells under external back bias

A model to study the performance of a Metal-Insulator-Semiconductor with induced inversion layer (MIS/IL) solar cells as the Al/tunnel-oxide/p-Si structure was developed. The solution included the effect of change in cell parameters namely: doping concentration, oxide thickness, mobile charge density. and metal work function. It also included the dependence on the mobile charge density and fixed oxide charge density. A back bias applied between substrate and metal inversion grid was added to the solution. It was found out that the efficiency is sensitive to change in external back bias. Optimization of efficiency was sought in the range, when 0<V<0.6 volt, at mobile charge density 10(13)<Q(m)<5x10(13) (cm(-2)), doping concentration 3x10(16)<Na<5x10(16) (cm(-3)), and metal work function 3<phi(m)<3.5 (eV). Numerical results show that optimum efficiency was essentially located around V=0.6 volts.