Carbon Nanotube Nonvolatile Thin-Film Transistors With (Bi,Nd)4Ti3O12 Gate Insulators

Single-walled carbon nanotube (SWCNT) nonvolatile thin-film transistors (TFTs) with (Bi, Nd)(4)Ti3O12 (BNT) gate insulators were fabricated. The electrical properties of BNT films and SWCNT/BNT TFTs were investigated. The subthreshold swing, the threshold voltage, the channel mobility, and the ON/OFF ratio of SWCNT/BNT TFTs reach to 62.5 mV/decade, 0.45 V, 1.3 x 10(3) cm(2)/Vs, and 1.5 x 10(7), respectively. Notably, the device shows a memory window of similar to 4.1 V and a long retention time of similar to 10(7) s. These mainly attribute to the SWCNTs channel and BNT ferroelectric gate insulator, which induce much larger charge in channel layer. These results suggest that the SWCNT/BNT TFTs are suitable for the next-generation nonvolatile memory devices and integrated circuits.