Carbon Nanotube Nonvolatile Thin-Film Transistors With (Bi,Nd)4Ti3O12 Gate Insulators

被引：2

作者：

Tan, Qiuhong ^{[1
]}

Wang, Jinbin ^{[2
]}

Zhong, Xiangli ^{[2
]}

Wang, Qianjin ^{[1
]}

Liu, Yingkai ^{[1
]}

Shi, Junsheng ^{[1
]}

Jiang, Shaoquan ^{[1
]}

机构：

[1] Yunnan Normal Univ, Coll Phys & Elect Informat, Kunming 650500, Peoples R China

[2] Xiangtan Univ, Key Lab Low Dimens Mat, Xiangtan 411105, Hunan, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Ferroelectric film; nonvolatile memory; single-walled carbon nanotube (SWCNTs); thin-film transistors (TFTs); NANOWIRE; HYSTERESIS;

D O I：

10.1109/TED.2014.2326407

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-walled carbon nanotube (SWCNT) nonvolatile thin-film transistors (TFTs) with (Bi, Nd)(4)Ti3O12 (BNT) gate insulators were fabricated. The electrical properties of BNT films and SWCNT/BNT TFTs were investigated. The subthreshold swing, the threshold voltage, the channel mobility, and the ON/OFF ratio of SWCNT/BNT TFTs reach to 62.5 mV/decade, 0.45 V, 1.3 x 10(3) cm(2)/Vs, and 1.5 x 10(7), respectively. Notably, the device shows a memory window of similar to 4.1 V and a long retention time of similar to 10(7) s. These mainly attribute to the SWCNTs channel and BNT ferroelectric gate insulator, which induce much larger charge in channel layer. These results suggest that the SWCNT/BNT TFTs are suitable for the next-generation nonvolatile memory devices and integrated circuits.

引用

页码：2628 / 2632

页数：5

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