Dynamics of In atom during InAs/GaAs(001) growth process

被引：16

作者：

Ishii, A ^{[1
]}

Fujiwara, K

Aisaka, T

机构：

[1] Tottori Univ, Dept Appl Math & Phys, Tottori 6808552, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki, Japan

来源：

APPLIED SURFACE SCIENCE | 2003年 / 216卷 / 1-4期

关键词：

molecular beam epitaxy growth; lattice-mismatch heterostructures; quantum dots;

D O I：

10.1016/S0169-4332(03)00410-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We calculated the dynamics of indium atom during the molecular beam epitaxy growth of InAs on GaAs(0 0 1) using the first-principle calculation. The result shows us that indium atom is very mobile. The hopping barrier energy of In is almost same as that of As on GaAs(0 0 1) surface. The substitution of In toward the substrate GaAs(0 0 1) also occurred, because the energy difference between the In atom on the second topmost layer and the substitution of it with the Ga atom of the fourth layer is very small. Thus, we should be careful to analyze experiments because indium atom is very active and mobile on GaAs(0 0 1) surface. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：478 / 482

页数：5

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