Thermodynamic analysis of hydride vapor phase epitaxy of GaN

A thermodynamic analysis of hydride vapor phase epitaxy (HVPE) is described for GaN. The partial pressures of gaseous species in equilibrium with GaN are calculated for temperatures, input GaCl partial pressures, input V/III ratios and mole fractions of hydrogen relative to the inert gas atoms. It is shown that the deposition of GaN is significantly influenced by the hydrogen mole fraction in the carrier gas. The growth rate is discussed in comparison with the experimental data reported in the literature. It is shown that the growth rate of GaN grown using HVPE is thermodynamically controlled.