Fabrication and characterization of high-brightness light emitting diodes based on n-ZnO nanorods grown by a low-temperature chemical method on p-4H-SiC and p-GaN

Light emitting diodes (LEDs) based on n-ZnO nanorods (NRs)/p-4H-SiC and n-ZnO (NRs)/p-GaN were fabricated and characterized. For the two LEDs the ZnO NRs were grown using a low temperature (<100 degrees C) aqueous chemical growth (ACG) technique. Both LEDs showed very bright nearly white light electroluminescence (EL) emission. The observed luminescence was a result of the combination of three emission lines composed of violet-blue, green and orange-red peaks observed from the two LEDs. Room temperature photoluminescence (PL) was also measured and consistency with EL was observed. It was found that the green and violet-blue peaks are red-shifted while the orange peak is blue-shifted in the EL measurement. It was also found that due to the effect of the GaN substrate the violet-blue peak in the EL measurement is more red-shifted in n-ZnO (NRs)/p-GaN LEDs as compared to n-ZnO (NRs)/p-4H-SiC LEDs.