High-speed electroab sorption modulators buried with ruthenium-doped SI-InP

被引：13

作者：

Tamura, M ^{[1
]}

Yamanaka, T ^{[1
]}

Fukano, H ^{[1
]}

Akage, Y ^{[1
]}

Kondo, Y ^{[1
]}

Saitoh, T ^{[1
]}

机构：

[1] NTT Corp, NTT Photon Labs, Kanagawa 2430198, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 12期

关键词：

electroabsorption (EA) modulators; multiple quantum well (MQW); optical communication; ruthenium (Ru); semi-insulating (SI) InP;

D O I：

10.1109/LPT.2004.836354

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAlAs-InAlAs electroabsorption modulators are successfully fabricated using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison of measured and calculated microwave characteristics reveals that there is no additional microwave loss because zinc diffusion is inhibited by the use of Ru-doped SI-InP layers. A small-signal electrooptical response with a -3-dB electrical bandwidth of over 50 GHz is demonstrated.

引用

页码：2613 / 2615

页数：3

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