Evaluation of a total reflection set-up by an interface geometric model

被引：3

作者：

Delgado, M ^{[1
]}

Delgado, E ^{[1
]}

机构：

[1] IES Juan Carlos 1, Madrid 28350, Spain

来源：

OPTIK | 2003年 / 113卷 / 12期

关键词：

interface; critical angle; Goos-Haenchen effect; penetration distance; longitudinal displacement; displacement time;

D O I：

10.1078/0030-4026-00205

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have studied the total reflection regime through a model represented by a region separating two dielectric bulk media with well-defined refraction indexes. This region is considered to be an interface in which the following hypotheses are established: - Refraction index linear variation with the transition from one medium to the other. - The thickness depends on the optical phenomenon supposedly produced in the interface. The results we obtained were in close agreement with those obtained by authors who have studied this regime through a fundamentally different treatment.

引用

页码：520 / 526

页数：7

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[2]

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[3]

CABRERA JM, 1999, OPTICA ELECTROMAGNET, V2

[4]

Costa de Beauregard O, 1977, PHYS REV D, V15, P3553