Nature of the 2.8 eV photoluminescence band in Mg doped GaN

被引：348

作者：

Kaufmann, U ^{[1
]}

Kunzer, M

Maier, M

Obloh, H

Ramakrishnan, A

Santic, B

Schlotter, P

机构：

[1] Fraunhofer Inst Angew Festkorperphys, D-79108 Freiburg, Germany

[2] Rudjer Boskovic Inst, HR-10000 Zagreb, Croatia

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 11期

关键词：

D O I：

10.1063/1.120983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The blue Mg induced 2.8 eV photoluminescence (PL) band in metalorganic chemical vapor deposition grown GaN has been studied in a large number of samples with varying Mg content. It emerges near a Mg concentration of 1 x 10(19) cm(-3) and at higher concentrations dominates the room temperature PL spectrum, The excitation power dependence of the 2.8 eV band provides convincing evidence for its donor-acceptor (D-A) pair recombination character. It is suggested that the acceptor A is isolated Rig,, while the spatially separated, deep donor (430 meV) D is attributed to a nearest-neighbor associate of a Mg-Ga acceptor with a nitrogen vacancy, formed by self-compensation. (C) 1998 American Institute of Physics.

引用

页码：1326 / 1328

页数：3

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