Wideband CMOS transimpedance amplifier

被引：13

作者：

Kossel, M ^{[1
]}

Menolfi, C ^{[1
]}

Morf, T ^{[1
]}

Schmatz, M ^{[1
]}

Toifl, T ^{[1
]}

机构：

[1] IBM Corp, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 07期

关键词：

D O I：

10.1049/el:20030398

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully differential wideband CMOS transimpedance amplifier is presented. Simulation results of different inductive peaking configurations are shown. Measured performances give a 19 GHz bandwidth and 45 dBOmega transimpedance gain at 6.5 mW power consumption.

引用

页码：587 / 588

页数：2

共 4 条

[1] Bandwidth extension in CMOS with optimized on-chip inductors [J].

Mohan, SS ;

Hershenson, MD ;

Boyd, SP ;

Lee, TH .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (03) :346-355

[2] Asynchronous 250-mb/s optical receivers with integrated detector in standard CMOS technology for optocoupler applications [J].

Rooman, C ;

Coppée, D ;

Kuijk, M .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (07) :953-958

[3]

SCHAFBAUER T, 2002, S VLSI TECHN HON US

[4] Wideband low noise CMOS transimpedance amplifier for gigaHertz operation [J].

Toumazou, C ;

Park, SM .

ELECTRONICS LETTERS, 1996, 32 (13) :1194-1196

← 1 →