Investigation of InP/InGaAs pnp δ-doped heterojunction bipolar transistor

被引：0

作者：

Tsai, JH ^{[1
]}

Zhu, KP ^{[1
]}

Chu, YC ^{[1
]}

Chiu, SY ^{[1
]}

机构：

[1] Natl Kaohsiung Normal Univ, Dept Phys, Kaohsiung, Taiwan

来源：

ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2004年

关键词：

D O I：

10.1109/ESSDER.2004.1356584

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP/InGaAs delta-doped pnp heterojunction bipolar transistor (HBT) has been first successfully fabricated and demonstrated. The addition of a delta-doped sheet between two undoped spacer layers more effectively eliminates the potential spike at emitter-base junction, lowers the emitter-collector offset voltage, and increases the effectively barrier for electrons, simultaneously. A maximum current gain of 50 and a low offset voltage of 70 m V are obtained, respectively. To our knowledge, the offset voltage of the studied device is the best report for the Inp/InGaAs pnp HBT's.

引用

页码：437 / 439

页数：3

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