Gamma-Ray-Induced Error Pattern Analysis for MLC 3-D NAND Flash Memories

被引：11

作者：

Surendranathan, Umeshwarnath ^{[1
]}

Kumari, Preeti ^{[1
]}

Wasiolek, Maryla ^{[2
]}

Hattar, Khalid ^{[2
]}

Boykin, Timothy ^{[1
]}

Ray, Biswajit ^{[1
]}

机构：

[1] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2021年 / 68卷 / 05期

基金：

美国国家科学基金会;

关键词：

Radiation effects; Flash memories; Logic gates; Nonvolatile memory; Micrometers; Laboratories; Gamma-rays; 3-D NAND flash; error rate; ionizing radiation; memory controller; multi-level cell (MLC); shared pages; single-event exposure; total ionizing dose; RADIATION RESPONSE;

D O I：

10.1109/TNS.2021.3059186

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article analyzes the data corruption pattern in the shared pages of multi-level cell (MLC) 3-D NAND memory under ionizing radiation from a Co-60 gamma-ray source for up to 20 krad(Si) dose. The results show that the radiation-induced error pattern between the shared pages follows a unique correlated behavior. We also find that the error locations within a given page remain uncorrelated, meaning that the occurrence of an error does not force a cluster of errors under ionizing radiation.

引用

页码：733 / 739

页数：7

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