Gamma-Ray-Induced Error Pattern Analysis for MLC 3-D NAND Flash Memories

被引：11
|
作者：
Surendranathan, Umeshwarnath [1 ]
Kumari, Preeti [1 ]
Wasiolek, Maryla [2 ]
Hattar, Khalid [2 ]
Boykin, Timothy [1 ]
Ray, Biswajit [1 ]
机构：
[1] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2021年 / 68卷 / 05期
基金：
美国国家科学基金会;
关键词：
Radiation effects; Flash memories; Logic gates; Nonvolatile memory; Micrometers; Laboratories; Gamma-rays; 3-D NAND flash; error rate; ionizing radiation; memory controller; multi-level cell (MLC); shared pages; single-event exposure; total ionizing dose; RADIATION RESPONSE;
D O I：
10.1109/TNS.2021.3059186
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article analyzes the data corruption pattern in the shared pages of multi-level cell (MLC) 3-D NAND memory under ionizing radiation from a Co-60 gamma-ray source for up to 20 krad(Si) dose. The results show that the radiation-induced error pattern between the shared pages follows a unique correlated behavior. We also find that the error locations within a given page remain uncorrelated, meaning that the occurrence of an error does not force a cluster of errors under ionizing radiation.
引用
收藏
页码：733 / 739
页数：7
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