The role of Be incorporation in the modulation of the N doping ZnO

被引：19
作者：
Chen, Mingming [1 ,2 ]
Zhu, Yuan [1 ]
Ji, Xu [1 ]
Chen, Anqi [1 ]
Su, Longxing [1 ]
Shen, Zhen [1 ]
Yang, Chunlei [3 ]
Xiang, Rong [1 ]
Gui, Xuchun [1 ]
Huang, Feng [1 ]
Tang, Zikang [1 ,4 ]
机构：
[1] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[2] Jiangsu Univ, Fac Sci, Zhenjiang 212013, Jiangsu, Peoples R China
[3] Chinese Acad Sci, Shen Zhen Inst Adv Technol, Ctr Photovolta & Solar Energy, Shenzhen, Peoples R China
[4] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 622卷
基金：
中国国家自然科学基金;
关键词：
p-Type conductivity; BeZnO:N; Raman spectroscopy; ZnO; P-TYPE ZNO; OPTICAL-PROPERTIES; FILMS; GROWTH; ACCEPTOR; MODES; OXIDE; GA; AL;
D O I：
10.1016/j.jallcom.2014.08.179
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The low solubility of nitrogen in ZnO challenges the growth conditions for preparing p-type ZnO:N films. In this work, the effects of Be incorporation on the nitrogen doping ZnO are studied. The doping window for nitrogen mono-doping ZnO is very narrow. The nitrogen doping concentration in the ZnO:N is low, and greatly depends on the O/N ratio, Zn/O ratio and growth temperature parameters. However, the window for nitrogen doping can be substantially widened in the Be-N codoping ZnO process. The enhanced nitrogen doping level in the BeZnO:N films is fundamentally related to the strong Be-N bonds. Finally, p-type single-crystal hexagonal BeZnO:N films with more uniformly distributed nitrogen are obtained. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：719 / 724
页数：6
相关论文
共 49 条
[1]   On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide -: art. no. 112112 [J].
Barnes, TM ;
Olson, K ;
Wolden, CA .
APPLIED PHYSICS LETTERS, 2005, 86 (11) :1-3
[2]   Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li [J].
Bundesmann, C ;
Ashkenov, N ;
Schubert, M ;
Spemann, D ;
Butz, T ;
Kaidashev, EM ;
Lorenz, M ;
Grundmann, M .
APPLIED PHYSICS LETTERS, 2003, 83 (10) :1974-1976
[3]   p-type behavior in In-N codoped ZnO thin films -: art. no. 252106 [J].
Chen, LL ;
Lu, JG ;
Ye, ZZ ;
Lin, YM ;
Zhao, BH ;
Ye, YM ;
Li, JS ;
Zhu, LP .
APPLIED PHYSICS LETTERS, 2005, 87 (25) :1-3
[4]   Suppression of oxygen vacancies in Be alloyed ZnO [J].
Chen, Mingming ;
Zhu, Yuan ;
Su, Longxing ;
Zhang, Quanlin ;
Xiang, Rong ;
Gui, Xuchun ;
Wu, Tianzhun ;
Cao, Xingzhong ;
Zhang, Peng ;
Wang, Baoyi ;
Tang, Zikang .
JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 577 :179-182
[5]   Formation behavior of BexZn1-xO alloys grown by plasma-assisted molecular beam epitaxy [J].
Chen, Mingming ;
Zhu, Yuan ;
Su, Longxing ;
Zhang, Quanlin ;
Chen, Anqi ;
Ji, Xu ;
Xiang, Rong ;
Gui, Xuchun ;
Wu, Tianzhun ;
Pan, Bicai ;
Tang, Zikang .
APPLIED PHYSICS LETTERS, 2013, 102 (20)
[6]   Stabilization of p-type dopant nitrogen in BeZnO ternary alloy epitaxial thin films [J].
Chen, Mingming ;
Xiang, Rong ;
Su, Longxing ;
Zhang, Quanlin ;
Cao, Jiashi ;
Zhu, Yuan ;
Gui, Xuchun ;
Wu, Tianzhun ;
Tang, Zikang .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (45)
[7]   ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer [J].
Chen, Mingming ;
Zhang, Quanlin ;
Su, Longxing ;
Su, Yuquan ;
Cao, Jiashi ;
Zhu, Yuan ;
Wu, Tianzhun ;
Gui, Xuchun ;
Yang, Chunlei ;
Xiang, Rong ;
Tang, Zikang .
MATERIALS RESEARCH BULLETIN, 2012, 47 (09) :2673-2675
[8]  
Chen X., 2011, J APPL PHYS, V110
[9]   Effect of compressive stress on stability of N-doped p-type ZnO [J].
Chen, Xingyou ;
Zhang, Zhenzhong ;
Yao, Bin ;
Jiang, Mingming ;
Wang, Shuangpeng ;
Li, Binghui ;
Shan, Chongxin ;
Liu, Lei ;
Zhao, Dongxu ;
Shen, Dezhen .
APPLIED PHYSICS LETTERS, 2011, 99 (09)
[10]  
Chu S, 2011, NAT NANOTECHNOL, V6, P506, DOI [10.1038/nnano.2011.97, 10.1038/NNANO.2011.97]
12345