Various field emitters of single crystal diamond

被引:0
作者
Nishibayashi, Y
Ando, Y
Furuta, H
Kobashi, K
Meguro, K
Imai, T
Hirao, T
Oura, K
机构
[1] Osaka Univ, Ctr Adv Res Projects, FCT Project JFCC, Suita, Osaka 5650871, Japan
[2] Sumitomo Elect Ind Ltd, Itami R&D Labs, Itami, Hyogo 6640016, Japan
[3] Osaka Univ, Fac Engn, Suita, Osaka 5650871, Japan
来源
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY | 2003年 / 13卷 / 01期
关键词
diamond; reactive ion etching; anisotropic etching; anisotropic growth; field emission;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have fabricated three new differently shaped emitters of single crystal diamond. They are emitter tips shaped like a tall pyramid, a needle, and a candle. The tall pyramidal emitter was grown epitaxially on a fine column with a high aspect ratio. The needle emitter was etched in microwave plasma from a fine column with a high aspect ratio. The candle emitter was etched by the reactive ion etching (RIE) technique using an Al mask shaped like the frustum of a cone. The technology for fabricating new shaped emitters involves forming a fine column on single crystal diamond and reforming the fine column to a sharp tip. The fine column was formed after diamond substrate with an Al dot mask was dry-etched. Although it is usually difficult to obtain both a high aspect ratio (height/diameter) column and a smoothly etched surface, we have fabricated tall fine columns (aspect ratio of 8) on smoothly etched surfaces using a novel RIE technique. It was found that it is important to mix 1similar to2% CF4 gas in O-2 gas. Using a high aspect ratio column, a novel pyramid-shaped tip was fabricated by anisotropic homoepitaxial growth and a needle-shaped tip was fabricated by anisotropic etching in microwave plasma under optimum conditions. After an Al mask shaped like the frustum of a cone was etched with diamond by our novel RIE technique, we were able to successfully fabricate a candle-shaped tip. It was confirmed that the diameter of the emitter tip was less than 80 nm for a tall pyramid-shaped tip, less than 40 nm for a needle-shaped tip and less than 10 nm for a candle-shaped tip.
引用
收藏
页码:19 / 30
页数:12
相关论文
共 10 条
  • [1] Smooth and high-rate reactive ion etching of diamond
    Ando, Y
    Nishibayashi, Y
    Kobashi, K
    Hirao, T
    Oura, K
    [J]. DIAMOND AND RELATED MATERIALS, 2002, 11 (3-6) : 824 - 827
  • [2] Ando Y, 2002, NEW DIAM FRONT C TEC, V12, P137
  • [3] SILICON TIPS WITH DIAMOND PARTICLES ON THEM - NEW FIELD EMITTERS
    GIVARGIZOV, EI
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 414 - 417
  • [4] Kang WP, 2001, NEW DIAM FRONT C TEC, V11, P129
  • [5] Micropatterned polycrystalline diamond field emitter vacuum diode arrays
    Kang, WP
    Davidson, JL
    Howell, M
    Bhuva, B
    Kinser, DL
    Kerns, DV
    Li, Q
    Xu, JF
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 2068 - 2071
  • [6] ELECTRON-EMISSION FROM DIAMOND-COATED SILICON FIELD EMITTERS
    LIU, J
    ZHIRNOV, VV
    WOJAK, GJ
    MYERS, AF
    CHOI, WB
    HREN, JJ
    WOLTER, SD
    MCCLURE, MT
    STONER, BR
    GLASS, JT
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (22) : 2842 - 2844
  • [7] Anisotropic etching of a fine column on a single crystal diamond
    Nishibayashi, Y
    Ando, Y
    Saito, H
    Imai, T
    Hirao, T
    Oura, K
    [J]. DIAMOND AND RELATED MATERIALS, 2001, 10 (9-10) : 1732 - 1735
  • [8] Homoepitaxial growth on fine columns of single crystal diamond for a field emitter
    Nishibayashi, Y
    Saito, H
    Imai, T
    Fujimori, N
    [J]. DIAMOND AND RELATED MATERIALS, 2000, 9 (3-6) : 290 - 294
  • [9] FABRICATION OF A DIAMOND FIELD EMITTER ARRAY
    OKANO, K
    HOSHINA, K
    IIDA, M
    KOIZUMI, S
    INUZUKA, T
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (20) : 2742 - 2744
  • [10] Reactive ion etching of diamond in O2 and CF4 plasma, and fabrication of porous diamond for field emitter cathodes
    Shiomi, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12B): : 7745 - 7748