Ferromagnetism in Mn-implanted ZnO:Sn single crystals

被引:410
作者
Norton, DP
Pearton, SJ
Hebard, AF
Theodoropoulou, N
Boatner, LA
Wilson, RG
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
[3] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
[4] Stevenson Ranch, San Jose, CA 95131 USA
关键词
D O I
10.1063/1.1537457
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the magnetic properties of Mn-implanted n-type ZnO single crystals that are codoped with Sn. Theory predicts that room-temperature carrier-mediated ferromagnetism should be possible in manganese-doped p-type ZnO, although Mn-doped n-type ZnO should not be ferromagnetic. While previous efforts report only low-temperature ferromagnetism in Mn-doped ZnO that is n type via shallow donors, we find evidence for ferromagnetism with a Curie temperature of similar to250 K in ZnO that is codoped with Mn and Sn. As a 4+ valence cation, Sn should behave as a doubly ionized donor, thus introducing states deep in the gap. Hysteresis is clearly observed in magnetization versus field curves. Differences in zero-field-cooled and field-cooled magnetization persists up to similar to250 K for Sn-doped ZnO crystals implanted with 3 at. % Mn. Increasing the Mn concentration to 5 at. % significantly reduces the magnetic hysteresis. This latter observation is inconsistent with the origin for ferromagnetism being due to segregated secondary phases, and strongly suggests that a near-room-temperature dilute magnetic semiconducting oxide has been realized. Based on these results, ZnO doped with Mn and Sn may prove promising as a ferromagnetic semiconductor for spintronics. (C) 2003 American Institute of Physics.
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页码:239 / 241
页数:3
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