Highly Efficient PEDOT:PSS/Silicon Hybrid Solar Cells via Effective Surface Microengineering of Low-Cost Solar-Grade Silicon Wafers

被引:50
作者
Srivastava, Avritti [1 ,2 ]
Sharma, Deepak [1 ,2 ]
Kumari, Premshila [1 ,2 ]
Dutta, Mrinal [1 ,2 ]
Srivastava, Sanjay K. [1 ,2 ]
机构
[1] CSIR, Natl Phys Lab, Adv Mat & Device Metrol Div, Photovolta Metrol Sect, New Delhi 110012, India
[2] Acad Sci & Innovat Res AcSIR, New Delhi 110012, India
来源
ACS APPLIED ENERGY MATERIALS | 2021年 / 4卷 / 04期
关键词
solar cell; silicon; hybrid solar cell; PEDOT:PSS; reflectance; ethylene glycol; minority carrier lifetime; passivation; recombination; KOH; CONDUCTIVITY; PASSIVATION; PEDOT/PSS; ANTIREFLECTION; PERFORMANCE; ELECTRODES; FILM;
D O I
10.1021/acsaem.1c00511
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The organic carrier-selective layer, poly(3,4-ethylenedioxythiophene):poly-(styrene sulfonate) (PEDOT:PSS) coated on Si wafers, has attracted a lot of attention toward the development of low-cost and efficient hybrid solar cells (HSCs). Here, highly efficient PEDOT:PSS/Si HSCs are reported via an effective surface microengineering of the as-cut, low-cost solar-grade thin Si wafers, an aspect rarely addressed before, by a simple one-step aqueous KOH process. The influence of surface microstructuring on their light harvesting properties, polymer/Si junction formation, and photovoltaic (PV) performance of the PEDOT:PSS/Si HSCs are investigated. The simple one-step process under the optimized processing conditions reduces the weighted surface reflectivity from >35 to <9% in a broad spectral range in addition to removing the surface saw damages of the wafers completely. The combined effect in turn improves the PEDOT:PSS/Si interface (junction) property, leading to a highly efficient PEDOT:PSS/Si HSC even in its simplest possible device structure. Moreover, the antireflective and surface passivation properties of the PEDOT:PSS layer for the microstructured Si surfaces are also demonstrated. The optimized microsurface and cell processing conditions resulted in the HSCs with a photoconversion efficiency >12.25%, which is absolute similar to 9.70% (similar to 5 folds) higher when compared to that on starting non-structured Si wafers. The results are further supported by detailed dark J-V characteristics and quantum efficiency analysis of the devices. The study establishes that microengineering of the commercial as-cut Si wafers removes the surface damages on both sides which if not addressed properly cause very high surface recombination losses and have a detrimental effect on the polymer/Si junction and hence the PV performances. The study paves the way to develop simple yet efficient HSCs on such economic solar-grade Si wafers commonly used for the conventional Si solar cells.
引用
收藏
页码:4181 / 4198
页数:18
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