In islands and their conversion to InAs quantum dots on GaAs (100): Structural and optical properties

被引：15
作者：
Urbanczyk, A. [1 ]
Hamhuis, G. J. [1 ]
Notzel, R. [1 ]
机构：
[1] Eindhoven Univ Technol, COBRA Res Inst Commun Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 01期
关键词：
annealing; gallium arsenide; III-V semiconductors; indium compounds; molecular beam epitaxial growth; nanofabrication; nanostructured materials; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; GROWTH METHOD; GAAS(110);
D O I：
10.1063/1.3269700
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report growth of crystalline In islands on GaAs (100) by molecular beam epitaxy at low temperatures. The islands have a pyramidlike shape with well defined facets and epitaxial relation with the substrate. They are of nanoscale dimensions with high density. Above a certain substrate temperature, associated with the melting point of In, noncrystalline round shaped islands form with larger size and lower density. Upon conversion of the In islands into InAs islands under As flux, the final shape does not depend on the original crystalline state but on the annealing temperature of the InAs islands. Clear photoluminescence is observed from InAs quantum dots after conversion of the crystalline In islands.
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页数：4
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