Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer

被引：77

作者：

Jin, C. Y. ^{[1
]}

Liu, H. Y.

Zhang, S. Y.

Jiang, Q.

Liew, S. L.

Hopkinson, M.

Badcock, T. J.

Nabavi, E.

Mowbray, D. J.

机构：

[1] Univ Sheffield, EPSRC, Natl Ctr Technol 3 4, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 02期

关键词：

D O I：

10.1063/1.2752778

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The excitation power dependence of the ground and excited state transitions in type-II InAs-GaAs0.78Sb0.22 quantum dot structure has been studied. Both transitions exhibit a strong blueshift with increasing excitation power but their separation remains constant. This behavior indicates a carrier-induced electric field oriented predominantly along the growth axis, which requires the holes to be localized in the GaAsSb above quantum dots. An accelerated blueshift of the ground state emission is observed once the excited state in the dots starts to populate. This behavior can be explained by a smaller spontaneous recombination coefficient for the excited state transition. (C) 2007 American Institute of Physics.

引用

页数：3

共 18 条

[1] Long-wavelength light emission from InAs quantum dots covered by GaAsSb grown on GaAs substrates [J].

Akahane, K ;

Yamamoto, N ;

Ohtani, N .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4) :295-299

[2] 2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer [J].

Balakrishnan, G ;

Huang, S ;

Rotter, TJ ;

Stintz, A ;

Dawson, LR ;

Malloy, KJ ;

Xu, H ;

Huffaker, DL .

APPLIED PHYSICS LETTERS, 2004, 84 (12) :2058-2060

[3] Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies [J].

Chen, T. T. ;

Cheng, C. L. ;

Chen, Y. F. ;

Chang, F. Y. ;

Lin, H. H. ;

Wu, C. -T. ;

Chen, C. -H. .

PHYSICAL REVIEW B, 2007, 75 (03)

[4] Properties of photoluminescence in type-II GaAsSb/GaAs multiple quantum wells [J].

Chiu, YS ;

Ya, MH ;

Su, WS ;

Chen, YF .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) :5810-5813

[5] Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots [J].

Fry, PW ;

Itskevich, IE ;

Mowbray, DJ ;

Skolnick, MS ;

Finley, JJ ;

Barker, JA ;

O'Reilly, EP ;

Wilson, LR ;

Larkin, IA ;

Maksym, PA ;

Hopkinson, M ;

Al-Khafaji, M ;

David, JPR ;

Cullis, AG ;

Hill, G ;

Clark, JC .

PHYSICAL REVIEW LETTERS, 2000, 84 (04) :733-736

[6] 1.3 μm room-temperature GaAs-based quantum-dot laser [J].

Huffaker, DL ;

Park, G ;

Zou, Z ;

Shchekin, OB ;

Deppe, DG .

APPLIED PHYSICS LETTERS, 1998, 73 (18) :2564-2566

[7] Continuous-wave operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers at room temperature -: art. no. 083110 [J].

Kim, HD ;

Jeong, WG ;

Lee, JH ;

Yim, JS ;

Lee, D ;

Stevenson, R ;

Dapkus, PD ;

Jang, JW ;

Pyun, SH .

APPLIED PHYSICS LETTERS, 2005, 87 (08)

[8] Temperature and excitation density dependence of the photoluminescence from annealed InAs/GaAs quantum dots [J].

Le Ru, EC ;

Fack, J ;

Murray, R .

PHYSICAL REVIEW B, 2003, 67 (24)

[9] Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer [J].

Liu, HY ;

Steer, MJ ;

Badcock, TJ ;

Mowbray, DJ ;

Skolnick, MS ;

Navaretti, P ;

Groom, KM ;

Hopkinson, M ;

Hogg, RA .

APPLIED PHYSICS LETTERS, 2005, 86 (14) :1-3

[10] Room-temperature 1.6 μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer [J].

Liu, HY ;

Steer, MJ ;

Badcock, TJ ;

Mowbray, DJ ;

Skolnick, MS ;

Suarez, F ;

Ng, JS ;

Hopkinson, M ;

David, JPR .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (04)

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