RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

被引：23

作者：

Chen, Jin ^{[1
]}

Zhang, En Xia ^{[1
]}

Zhang, Cher Xuan ^{[1
]}

McCurdy, Michael W. ^{[1
]}

Fleetwood, Daniel M. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Kaun, Stephen W. ^{[2
]}

Kyle, Erin C. H. ^{[2
]}

Speck, James S. ^{[2
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[2] Univ Calif Santa Barbara, Dept Mat, Goleta, CA 93117 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 06期

关键词：

AlGaN/GaN; degradation; HEMT; proton; RF; S-parameters; DEGRADATION; RADIATION; DC;

D O I：

10.1109/TNS.2014.2362872

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN high electron mobility transistors (HEMTs) irradiated with 1.8-MeV protons show more relative degradation in RF power/current gain, cutoff frequency f(T), and maximum oscillation frequency f(max) than DC transconductance. These result from radiation-induced increases in fast bulk and surface trap densities, as well as increasing impedance mismatch at high frequencies with increasing proton fluence. NH3-rich MBE devices show less degradation in DC transconductance, but more degradation in RF gain than Ga-rich devices.

引用

页码：2959 / 2964

页数：6

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