High-power diode-pumped Q-switched and mode-locked Nd:YVO4 laser with a Cr4+:YAG saturable absorber

被引:98
作者
Chen, YF [1 ]
Tsai, SW
Wang, SC
机构
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30050, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30050, Taiwan
关键词
D O I
10.1364/OL.25.001442
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate a high-power passively Q-switched and mode-locked Nd:YVO4 laser with a Cr4+:YAG saturable absorber. 2.7 W of average power with an 18-kHz Q-switched repetition rate was generated at a 12.5-W pump power. The peak power of a single pulse near the maximum of the Q-switched envelope was greater than 100 kW. (C) 2000 Optical Society of America.
引用
收藏
页码:1442 / 1444
页数:3
相关论文
共 11 条
[1]   Ab-initio calculation of excited state absorption of Cr4+ in Y3Al5O12 [J].
Ching, WY ;
Xu, YN ;
Brickeen, BK .
APPLIED PHYSICS LETTERS, 1999, 74 (25) :3755-3757
[2]   Investigation of a passive Q-switched, externally controlled, quasicontinuous or continuous pumped Nd:YAG laser [J].
Dascalu, T ;
Pavel, N ;
Lupei, V ;
Philipps, G ;
Beck, T ;
Weber, H .
OPTICAL ENGINEERING, 1996, 35 (05) :1247-1251
[3]  
EILERS H, 1992, APPL PHYS LETT, V61, P2598
[4]  
LIN T, 1999, OSA TECHNICAL DIGEST
[5]   Some optical properties of Cr4+-doped crystals [J].
Lipavsky, B ;
Kalisky, Y ;
Burshtein, Z ;
Shimony, Y ;
Rotman, S .
OPTICAL MATERIALS, 1999, 13 (01) :117-127
[6]  
SHESTAKOV AV, 1991, OSA TECHNICAL DIGEST, V10
[7]   Repetitive Q-Switching of a CW Nd:YAG laser using Cr4+:YAG saturable absorbers [J].
Shimony, Y ;
Burshtein, Z ;
Baranga, AB ;
Kalisky, Y ;
Strauss, M .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (02) :305-310
[8]   CR4+YAG AS PASSIVE Q-SWITCH AND BREWSTER PLATE IN A PULSED ND-YAG LASER [J].
SHIMONY, Y ;
BURSHTEIN, Z ;
KALISKY, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1995, 31 (10) :1738-1741
[9]  
Siegman A. E., 1986, LASERS, P1024
[10]   A generalized model for passively Q-switched lasers including excited state absorption in the saturable absorber [J].
Xiao, GH ;
Bass, M .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (01) :41-44