Statistical characterization of hold time violations in 130nm CMOS technology

被引:0
作者
Neuberger, Gustavo [1 ]
Kastensmidt, Femanda [1 ]
Reis, Ricardo [1 ]
Wirth, Gilson [2 ]
Brederlow, Ralf [3 ]
Pacha, Christian [3 ]
机构
[1] Univ Fed Rio Grande do Sul, Porto Alegre, RS, Brazil
[2] Univ Estadual Rio Grande do Sul, Guaiba, RS, Brazil
[3] Infineon Technol, Munich, Germany
来源
ESSCIRC 2006: PROCEEDINGS OF THE 32ND EUROPEAN SOLID-STATE CIRCUITS CONFERENCE | 2006年
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Statistical process variations are a critical issue for circuit design strategies to ensure high yield in sub-100nm technologies. In this work we present an on-chip measurement technique to characterize hold time violations of flip-flops in short logic paths, which are generated by clock-edge uncertainties in synchronous designs. Using a precise programmable clock-to-data skew generation circuit, a measurement resolution of similar to 1ps is achieved to emulate race conditions. Statistical variations of hold time violations are measured in a 130nm low-power CMOS technology for various register-to-register configurations and show 3 sigma die-to-die standard deviations of up to 15%.
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页码:114 / +
页数:2
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