Tunnelling transient spectroscopy on self-assembled InAs quantum dots

被引：0
|
作者：
Schramm, A. [1 ]
Schulz, S. [1 ]
Schaefer, J. [1 ]
Heyn, Ch. [1 ]
Hansen, W. [1 ]
机构：
[1] Univ Hamburg, Inst Phys Appl, Jungiusstr 11, D-20355 Hamburg, Germany
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study electron tunnelling from self-assembled InAs quantum dots with time-resolved capacitance measurements at low temperature (T 10 K). Within a simple WKB model the electric field dependence of the tunnelling rate is analyzed. The data reveal that tunnelling emission from s- and p-like quantum dot states can clearly be resolved. The binding energies obtained from a triangular-well model are in good agreement with values obtained with DLTS experiments.
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页码：763 / +
页数：2
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