Microwave N2-Ar plasmas applied for N-graphene post synthesis

被引：10
作者：
Bundaleska, N. [1 ]
Bundaleski, N. [2 ,3 ]
Dias, A. [1 ]
Dias, F. M. [1 ]
Abrashev, M. [4 ]
Filipic, G. [5 ]
Cvelbar, U. [5 ]
Rakocevic, Z. [3 ]
Kissovski, Zh [4 ]
Henriques, J. [1 ]
Tatarova, E. [1 ]
机构：
[1] Univ Lisbon, Inst Plasmas & Fusao Nucl, Inst Super Tecn, P-1049001 Lisbon, Portugal
[2] Univ Nova Lisboa, Dept Fis, Fac Ciencias & Tecnol, P-2829516 Lisbon, Portugal
[3] Univ Belgrade, Vinca Inst Nucl Sci, POB 522, Belgrade 11001, Serbia
[4] Univ Sofia, Fac Phys, Sofia 1164, Bulgaria
[5] Jozef Stefan Inst, Dept Surface Engn & Optoelect F4, Ljubljana, Slovenia
来源：
MATERIALS RESEARCH EXPRESS | 2018年 / 5卷 / 09期
关键词：
N-graphene; microwave plasma; carbon nitrides; post synthesis; NITROGEN-DOPED GRAPHENE; GRAPHITIC CARBON NITRIDE; REDUCTION; SYSTEMS; RAMAN;
D O I：
10.1088/2053-1591/aad7e9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High level of nitrogen doping (similar to 25%) of free-standing graphene sheets was achieved using the remote region of a Ar-N-2 microwave plasmas. The relation between the percentage of nitrogen in the plasma and the characteristics of the treated samples has been investigated. Structural changes, being mainly created at the surface of graphene, increase significantly with the percentage of nitrogen in the gas mixture. For a mixture containing 5% of N-2 about 2.7 at.% of nitrogen was incorporated in the form of imide group and graphitic bonds (70%), and as N bound to sp3 carbon (30%). Increasing the nitrogen amount to 40% results in the production of samples with up to 25% of incorporated nitrogen. Formation of new types of carbon-nitride structures has also been observed. Detailed x-ray Photoelectron Spectroscopy and Transmission Electron Microscopy analysis support the hypothesis that a structure similar to beta-C3N4 has been synthesized.
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页数：13
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