Temperature Dependence of Avalanche Breakdown in InP and InAlAs

被引：72

作者：

Tan, Lionel Juen Jin ^{[1
]}

Ong, Daniel Swee Guan ^{[1
]}

Ng, Jo Shien ^{[1
]}

Tan, Chee Hing ^{[1
]}

Jones, Stephen K. ^{[2
]}

Qian, Yahong ^{[2
]}

David, John Paul Raj ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[2] Oclaro Technol Plc, Towcester NN12 8EQ, Northants, England

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2010年 / 46卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

Avalanche breakdown; avalanche photodiode (APD); impact ionization; InAlAs; InP; temperature dependence; tunnelling; IMPACT IONIZATION COEFFICIENTS; SEPARATE ABSORPTION; PHOTO-DIODES; PHOTODIODES; MULTIPLICATION; ALXGA1-XAS; CHARGE; NOISE;

D O I：

10.1109/JQE.2010.2044370

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Simple analytical expressions for temperature coefficients of breakdown voltage of avalanche photodiodes (APDs) utilizing InP or InAlAs are reported. The work is based on measurements of temperature dependence of avalanche breakdown voltage in a series of InP and InAlAs diodes at temperatures between 20 and 375 K. While avalanche breakdown voltage becomes more temperature sensitive with avalanche region thickness for both materials, the InAlAs diodes are less sensitive to temperature changes compared to InP diodes.

引用

页码：1153 / 1157

页数：5

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