Modeling of metal-semiconductor-metal photodetector for spice

被引：0

作者：

Gao, JJ ^{[1
]}

Gao, BX ^{[1
]}

Liang, CG ^{[1
]}

机构：

[1] Tsing Hua Univ, State Key Lab Microwave & Digital Commun, Beijing 100084, Peoples R China

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2000年 / 26卷 / 06期

关键词：

photodetector; device modeling; CAD;

D O I：

10.1002/1098-2760(20000920)26:6<390::AID-MOP12>3.0.CO;2-W

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An equivalent circuit model for a metal-semiconductor-metal (MSM) photodetector based on microwave port characteristics is presented for a SPICE simulator. The experiential formulas of dc characteristics and intrinsic capacitance-voltage characteristics are given. The model parameters are obtained from de and C-V measurement data by using curve fitting. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on MSM PDs of different sizes. (C) 2000 John Wiley & Sons, Inc.

引用

页码：390 / 394

页数：5

共 6 条

[1] Frequency-domain demonstration of transit-time-limited, large-area InGaP-InP-InGaAs MSM photodetectors
DeCorby, RG
MacDonald, RI
Sharma, R
Gouin, F
Noad, J
Puetz, N
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (07) : 985 - 987
[2] Nonstationary response of MSM photodetectors
Gvozdic, DM
Radunovic, JB
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (02) : 370 - 372
[3] Li Zhiqi, 1992, Research & Progress of SSE, V12, P225
[4] STUDIES OF HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODETECTOR WITH A GAAS/ALGAAS/GAAS HETEROSTRUCTURE
LU, J
SURRIDGE, R
PAKULSKI, G
VANDRIEL, H
XU, JM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (06) : 1087 - 1092
[5] A DEVICE MODEL FOR METAL-SEMICONDUCTOR METAL PHOTODETECTORS AND ITS APPLICATIONS TO OPTOELECTRONIC INTEGRATED-CIRCUIT SIMULATION
SANO, E
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (09) : 1964 - 1968
[6] High performance InP/InGaAs-based MSM photodetector operating at 1.3-1.5 mu m
Song, KC
Matin, MA
Robinson, B
Simmons, JG
Thompson, DA
Mascher, P
[J]. SOLID-STATE ELECTRONICS, 1996, 39 (09) : 1283 - 1287

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