A comparison between RF MEMS switches and semiconductor switches

被引：57
|
作者：
Grant, PD [1 ]
Denhoff, MW [1 ]
Mansour, RR [1 ]
机构：
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
2004 INTERNATIONAL CONFERENCE ON MEMS, NANO AND SMART SYSTEMS, PROCEEDINGS | 2004年
关键词：
D O I：
10.1109/ICMENS.2004.1509004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper addresses the fundamentals of RF switches providing a comparison between semiconductor and RF MEMS switches. The basis of comparison is introduced by defining a figure of merit that is a function of the off-state capacitance and the on-state resistance. A simple transmission line model is presented to illustrate the impact of the switch off-state capacitance on the switch isolation and frequency range of operation. The figure of merit analysis given in this paper demonstrates that RF MEMS switches have superior insertion loss and isolation performance in comparison to MESFET and p-i-n diode switches. The paper also addresses several other design considerations beside insertion loss and isolation for selecting the right RF switch. A discussion is given on the potential use of RF MEMS switches in satellite and wireless applications.
引用
收藏
页码：515 / 521
页数：7
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