Novel cleaning solutions for polysilicon film post chemical mechanical polishing

被引：15

作者：

Pan, TM ^{[1
]}

Lei, TF

Chen, CC

Chao, TS

Liaw, MC

Yang, WL

Tsai, MS

Lu, CP

Chang, WH

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[3] Natl Nano Device Labs, Hsinchu, Taiwan

[4] Feng Chia Univ, Grad Inst, Taichung 40724, Taiwan

[5] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan

[6] Merck Kanto Adv Chem Ltd, Tao Yuan, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 07期

关键词：

cleaning; CMP; EDTA; polysilicon; TMAH;

D O I：

10.1109/55.847373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH4OH+H2O) alkaline aqueous solution to enhance removal of metallic and organic contamination, From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning.

引用

页码：338 / 340

页数：3