High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes

被引：80

作者：

Shen, Jun ^{[1
]}

Liu, Xiangzhi ^{[1
,2
]}

Song, Xuefen ^{[1
]}

Li, Xinming ^{[3
]}

Wang, Jun ^{[4
]}

Zhou, Quan ^{[1
]}

Luo, Shi ^{[1
]}

Feng, Wenlin ^{[2
]}

Wei, Xingzhan ^{[1
]}

Lu, Shirong ^{[1
]}

Feng, Shuanglong ^{[1
]}

Du, Chunlei ^{[1
]}

Wang, Yuefeng ^{[1
]}

Shi, Haofei ^{[1
]}

Wei, Dapeng ^{[1
]}

机构：

[1] Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China

[2] Chongqing Univ Technol, Dept Appl Phys, Chongqing 400054, Peoples R China

[3] Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China

[4] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Sch Optoelect Informat, Chengdu 610054, Sichuan, Peoples R China

来源：

NANOSCALE | 2017年 / 9卷 / 18期

关键词：

WAVE-GUIDE PHOTODETECTORS; HIGH-RESPONSIVITY; INFRARED PHOTODETECTORS; 2-DIMENSIONAL MATERIALS; ULTRAHIGH RESPONSIVITY; BROAD-BAND; JUNCTION; LIGHT; HETEROSTRUCTURES;

D O I：

10.1039/c7nr00573c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Schottky heterojunctions based on graphene-silicon structures are promising for high-performance photodetectors. However, existing fabrication processes adopt transferred graphene as electrodes, limiting process compatibility and generating pollution because of the metal catalyst. In this report, photodetectors are fabricated using directly grown graphene nanowalls (GNWs) as electrodes. Due to the metal-free growth process, GNWs-Si heterojunctions with an ultralow measured current noise of 3.1 fA Hz(-1/2) are obtained, and the as-prepared photodetectors demonstrate specific detectivities of 5.88 x 10(13) cm Hz(1/2) W-1 and 2.27 x 10(14) cm Hz(1/2) W-1 based on the measured and calculated noise current, respectively, under ambient conditions. These are among the highest reported values for planar silicon Schottky photodetectors. In addition, an on/off ratio of 2 x 10(7), time response of 40 mu s, cut-off frequency of 8.5 kHz and responsivity of 0.52 A W-1 are simultaneously realized. The ultralow current noise is attributed to the excellent junction quality with a barrier height of 0.69 eV and an ideal factor of 1.18. Furthermore, obvious infrared photoresponse is observed in blackbody tests, and potential applications based on the photo-thermionic effect are discussed.

引用

页码：6020 / 6025

页数：6

共 37 条

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