Ultrahigh Hall mobility and suppressed backward scattering in layered semiconductor Bi2O2Se

被引：39

作者：

Tong, Tong ^{[1
]}

Zhang, Minhao ^{[1
]}

Chen, Yequan ^{[1
]}

Li, Yan ^{[1
]}

Chen, Liming ^{[1
]}

Zhang, Junran ^{[1
]}

Song, Fengqi ^{[2
]}

Wang, Xuefeng ^{[1
]}

Zou, Wenqin ^{[2
]}

Xu, Yongbing ^{[1
]}

Zhang, Rong ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Sch Phys, Nanjing 210093, Jiangsu, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 07期

基金：

中国国家自然科学基金;

关键词：

FIELD-EFFECT TRANSISTORS; HIGH-ELECTRON-MOBILITY; QUANTUM OSCILLATIONS; GRAPHENE; MAGNETOTRANSPORT; MAGNETORESISTANCE; CD3AS2; INSE; GAS;

D O I：

10.1063/1.5042727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on an ultrahigh Hall mobility exceeding 40 000 cm(2)/V s and a very long traditional scattering time in a trivial layered semiconductor Bi2O2Se. Shubnikov-de Haas (SdH) oscillations were observed in both the unsaturated longitudinal linear magnetoresistance R-xx and the transverse Hall resistance R-xy. The amplitude Delta R-xy of SdH oscillations was phase-shifted approximately 180 degrees with respect to Delta R-xx, indicating the strong suppression of electron backward scattering. This was further proved by the evidence of transport lifetime that is 10 times longer than the quantum lifetime. Our results show that the suppressed backward scattering in nontrivial Dirac semimetals can also occur in the trivial semiconductor Bi2O2Se. Published by AIP Publishing.

引用

页数：4

共 36 条

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