Structure and oscillatory multilayer relaxation of the bismuth (100) surface

被引:5
作者
Sun, J. [1 ,2 ]
Wang, J. [1 ,2 ]
Wells, J. [3 ,4 ,5 ]
Koroteev, Y. M. [6 ,7 ]
Bihlmayer, G. [8 ,9 ]
Chulkov, E. V. [10 ,11 ]
Hofmann, Ph [3 ,4 ]
Pohl, K. [1 ,2 ]
机构
[1] Univ New Hampshire, Dept Phys, Durham, NH 03824 USA
[2] Univ New Hampshire, Mat Sci Program, Durham, NH 03824 USA
[3] Univ Aarhus, Inst Storage Ring Facil, DK-8000 Aarhus C, Denmark
[4] Univ Aarhus, Interdisciplinary Nanosci Ctr iNANO, DK-8000 Aarhus C, Denmark
[5] NTNU, Inst Fysikk, N-7491 Trondheim, Norway
[6] DIPC, San Sebastian 20018, Basque Country, Spain
[7] Russian Acad Sci, Inst Strength Phys & Mat Sci, Tomsk 634021, Russia
[8] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[9] Forschungszentrum Julich, Inst Adv Simulat, D-52425 Julich, Germany
[10] Univ Basque Country, Dept Fis Mat, Fac Ciencias Quim, San Sebastian 20080, Basque Country, Spain
[11] Univ Basque Country, Ctr Mixto CSIC UPV EHU, Fac Ciencias Quim, San Sebastian 20080, Basque Country, Spain
来源
NEW JOURNAL OF PHYSICS | 2010年 / 12卷
基金
美国国家科学基金会;
关键词
ENERGY ELECTRON-DIFFRACTION; PLANE-WAVE METHOD; TRANSPORT-PROPERTIES; LATTICE-RELAXATION; BI; SEMIMETAL; TRANSITION; INSULATOR; SYSTEMS; STATE;
D O I
10.1088/1367-2630/12/6/063016
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present a combined experimental and theoretical study of the surface structure of single crystal Bi(100) via scanning tunneling microscopy (STM), low-energy electron diffraction intensity versus energy (LEED-IV) analysis and density functional theory (DFT). We find that the surface is unreconstructed and shows an unusually large oscillatory multilayer relaxation down to the sixth layer. This unexpected behavior will be explained by a novel mechanism related to the deeply penetrating electronic surface states. STM reveals wide (100) terraces, which are separated by two-layer high steps in which the shorter of the two interlayer spacings is terminating this surface, consistent with the LEED structural analysis and DFT.
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页数:13
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