MOVPE growth optimization for optically efficient GaInNAs quantum well structure

被引：4

作者：

Kim, KS ^{[1
]}

Lim, SJ ^{[1
]}

Kim, KH ^{[1
]}

Yoo, JR ^{[1
]}

Kim, T ^{[1
]}

Park, YJ ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Photon Lab, Yongin 449712, Gyeonggi Do, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 273卷 / 3-4期

关键词：

photoluminescence; metalorganic chemical vapor deposition; quantum well; GaInNAs; InGaAs; GaNAs;

D O I：

10.1016/j.jcrysgro.2004.09.041

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A detailed Study to achieve optically efficient GalnNAs QWs by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) is reported. It was found that the insertion of GaNAs/InGaAs layers to GaInNAs QW/GaAs barrier is very effective to control the emission wavelength and improve the optical property of QW. Indium rich (as high as 40%) GaInNAs QWs grown at higher V/III ratio are more desirable to extend emission wavelength over 1.3 mum due to reduced incorporation of impurities. The optical efficiencies of the QW structure were confirmed by the lasing performance in edge-emitting laser. The threshold current density and slope efficiency per facet of a 1360 nm laser diode are measured to be 892A/cm(2) and 0.135W/A, respectively. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：368 / 374

页数：7

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